Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate

ABSTRACT

A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

PRIORITY CLAIM

This application is a divisional application of U.S. patent applicationSer. No. 15/169,037, filed May 31, 2016, which is here incorporated byreference in its entirety.

BACKGROUND

The semiconductor integrated circuit industry has experienced rapidgrowth in the past several decades. Technological advances insemiconductor materials and design have produced increasingly smallerand more complex circuits. These material and design advances have beenmade possible as the technologies related to processing andmanufacturing have also undergone technical advances. In the course ofsemiconductor evolution, the number of interconnected devices per unitof area has increased as the size of the smallest component that can bereliably created has decreased.

One broad category of commonly used techniques employed to form materiallayers and alter properties over semiconductor wafers is deposition,which includes the techniques such as chemical vapor deposition,physical vapor deposition, sputtering, ion implantation, etc. In manysome kinds of deposition, plasma is used to produce chemically reactivespecies above wafer surface undergoing the deposition process. Astechnology scales, the need for atomic thickness control and highconformity and quality of deposited layers is desired. Atomic LayerDeposition (ALD) is a thin film deposition technique that is based onthe sequential use of a gas phase chemical process and is one depositionprocess that may be enhanced by the use of plasma. ALD depositiontypically use gases chemicals, typically called precursors, which reactwith the surface of a target substrate one at a time in a sequential,self-limiting, manner. Through the repeated exposure to separateprecursors, a thin film is slowly deposited.

“Plasma enhanced” ALD (PE-ALD) processes use plasma which is a mixtureof ions, electrons, neutral excited molecules. PE-ALD maintains use ofspecific chemical precursors as in ALD as described above. However, theplasma is used to create the necessary chemical reactions in a highlycontrolled manner. Further, PE-ALD allows for radical species to be usedin the deposition at lower process temperatures and often developingbetter film properties than in thermal ALD processes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features, whether on the devices or the wafersand semiconductor features described herein, may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1A is a perspective view of an embodiment of components of aplasma-enhanced deposition system according to aspects of the presentdisclosure. FIG. 1B is a cross-sectional view of an embodiment ofcomponents of a plasma-enhanced deposition system.

FIG. 2A is a simplified perspective view of an embodiment of componentsof a plasma-enhanced deposition system according to aspects of thepresent disclosure.

FIG. 2B is a bottom view of a plasma generating device according toaspects of the present disclosure.

FIG. 2C is a schematic view of a plasma generating device according toaspects of the present disclosure.

FIGS. 3A and 3B are cross-sectional, diagrammatic views of embodimentsof a plasma-enhanced deposition system according to aspects of thepresent disclosure. FIG. 3C illustrates a corresponding top view of FIG.3B.

FIG. 4 is a bottom view of an embodiment of a sector of aplasma-enhanced deposition system according to aspects of the presentdisclosure.

FIGS. 5, 6, and 7 are bottom views of various embodiments of sectors ofa plasma-enhanced deposition system, the sectors including illustratingan electrode plate according to aspects of the present disclosure.

FIG. 8 is a top view of an embodiment of a gas inlet plate of a sectorof a plasma-enhanced deposition system according to aspects of thepresent disclosure.

FIG. 9A is a cross-sectional view of an embodiment of a sector of aplasma-enhanced deposition system including a temperature-control deviceaccording to aspects of the present disclosure. FIG. 9B is a bottomreview of an embodiment of a sector having temperature-control of thesector from a device adjacent the sector.

FIG. 10 is a bottom view of an embodiment of a sector of aplasma-enhanced deposition system according to aspects of the presentdisclosure.

FIG. 11 is a flowchart of an embodiment of a method of depositing amaterial onto or into a semiconductor wafer according to aspects of thepresent disclosure.

These figures will be better understood by reference to the followingdetailed description.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof various embodiments. Specific examples of components and arrangementsare described below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

It is understood that several processing operations and/or features of adevice may be only briefly described, some such operations and/orfeatures being known to those of ordinary skill in the art. Also,additional processing steps or features can be added and certain of thefollowing processing steps or features can be removed and/or changedwhile still implementing the claims. Thus, the following descriptionshould be understood to represent examples only, and are not intended tosuggest that one or more steps or features is required in everyembodiment.

It is further understood that terms such as “top” and “bottom” arerelative only and not intended to be limiting. Certain descriptions ofthe present apparatus are oriented with reference to a target substratewithin the tool for ease of reference; however, this does notnecessitate the presence of a substrate in the apparatus unlessspecifically recited.

It is further understood that the present disclosure refers generally todeposition by use of a plasma enhanced deposition method. The wafers andsubstrates described herein may take various forms including but notlimited to semiconductor substrates or wafers (or portions thereof) orsubstrates of individual devices such as chips (e.g., fabricated on awafer) or transparent substrates such as for photomasks or fabricationof liquid crystal displays. Various features may be formed on thesubstrate by the addition, subtraction, and alteration of materiallayers formed on the substrate to produce integrated circuits includingthose formed by CMOS-based processes, MEMS devices, image sensors, andthe like. Furthermore, as described above, specific embodiments may bedescribed herein which are exemplary only and not intended to belimiting. Additionally, while described with respect to plasma-enhancedALD systems and methods, it should be understood that the embodimentsdescribed herein can have utility in other system configurations such asetch systems, other chemical vapor deposition systems and any systemincluding those which apply a process gas to a plasma generated in aprocess chamber.

Referring now to FIG. 1A, 1B, the illustrated semiconductormanufacturing system or apparatus 100. The system 100 may be aplasma-enhanced atomic layer deposition (PE-ALD) system. It is notedthat not all components of the system 100 are necessarily illustrated inFIGS. 1A, 1B, but certain omissions and/or simplifications are providedfor ease of reference and understanding of the present disclosure.

The PE-ALD system 100 includes a cover 102, a susceptor 104, a chamberbody 106, a gas injector and/or pump distribution plate 108, and aplasma generation device 112. Note that the system 100 is shown inseparate components having a spacing there between, however thesecomponents are typically mated together in implementation.

The cover 102 may provide an upper boundary to the process chamber. Thecover 102, or other component of the system 100, may include connectionto an external pumping system that provides process gases and/or removesby-products from the system 100.

The gas injector and/or pump distribution plate 108 may be included inthe PE-ALD system 100 beneath the cover 102. The distribution plate 108includes apertures through which process gases are supplied from a gassource. These process gases may be subsequently delivered to “sectors”of the PE-ALD system 100 as discussed below. The distribution plate 108is typically fabricated from stainless steel, aluminum (Al), or othermaterial.

The chamber body 106 may define sidewalls of the system 100. The chamberbody 106 may also define a chamber or process volume between thesusceptor 104 and the sector device 112. One or more target substratescan be positioned within this chamber or process volume. The chamberbody 106 may be aluminum, steel, or other material. The chamber orprocess volume defined by the chamber body 106 may be pressurized.

One or more target substrates (e.g., wafers) 103 may be disposed on thesusceptor 104. A target substrate as the term is used herein describescomponents having a surface upon which deposition of a material of oneor more atomic layers in thickness is desired. Exemplary targetsubstrates are discussed below including target substrate 302 of FIGS.3A/3B. The susceptor 104 may be operable to move (e.g., rotate) thetarget substrate. In some embodiments, the susceptor 104 rotates atarget substrate such that it is under a given sector, as illustrated inFIG. 2 . Further rotation may move the target substrate to anothersector including for performing another process. The PE-ALD system 100further includes a controller operable to control the rotation, theprovision of processing gases, the generation of plasma, and/or otherprocess parameters.

The PE-ALD system 100 further includes a plasma generating device (orsector device) 112. The plasma generating device 112 may include thermalshowerhead, plasma showerhead, and/or other configurations. The plasmagenerating device 112 includes one or more modules each referred to as asector 114 (see FIGS. 2A, 2B, 2C, 3A, 3B, 3C). In an embodiment, theplasma generating device 112 includes a plurality of sectors thatgenerate and provide plasma (e.g., four sectors), and a plurality ofsectors that are without plasma (e.g., four sectors). One suchconfiguration is illustrated with reference to FIG. 2C. FIG. 2C providesa plasma generating device 112C and an alternative embodiment of aplasma generating device 112D, each illustrating eight sectors 114. FIG.2C is described in further detail below; however, it is noted that theconfiguration of FIG. 2C is illustrative only and not intended to belimiting beyond what is specifically and explicitly recited in theclaims that follow. It is noted that other numbers of sectors areappropriate and within the scope of the present disclosure. The sectors114 may be module components such that a housing provides the module asa separate and distinct unit. The sectors 114 may subsequently besecured to the distribution plate 108 individually, or may be securedtogether to form the plasma generating device 112, which is in turnsecured to the distribution plate 108. In some embodiments, the sectors114 are secured to the chamber body 106 in addition or in lieu ofattachment to the distribution plate 108.

The sectors 114 may each be approximately wedge-shaped components beingwider toward the outer edge of the sector device and tapering toward thecenter edge. (It is noted that terms outer and inner edges as usedherein are relative to the sectors assembly in a circular arrangementonto the deposition system, see FIG. 2A, 2B, 2C.) In other embodiments,the sectors 114 have a rectangular shape. Each of the sectors 114 may beattached to the PE-ALD system 100 such that together they form thecircular plasma generating device 112 disposed above and facing thesusceptor 104. In an embodiment, each sector 114 is attached the PE-ALDsystem 100 by fasteners. The plurality of sectors 114 is spaced a smalldistance from a target substrate (e.g., wafer) disposed on the susceptor104. For example, in some embodiments, the plasma generating device 112and the sectors 114 are positioned within tens of millimeters from atarget substrate. In some embodiments, no device (e.g., plate)interposes the distance between the target substrate and a bottomsurface of the sector 114. Each of the sectors 114 of the plasmagenerating device 112 are operable to produce a plasma used in adeposition process performed by the system 100. Process gases includingchemical precursor components are delivered to the plasma generatingdevice 112. A radio frequency (RF) power, from an RF power supply, isapplied to an electrode of the sectors 114 of the plasma generatingdevice 112, as discussed below, to generate a plasma to which theprocess gases are introduced. Thus, the excited gas or mixture of gasesis then delivered from the plasma generating device 112 toward thetarget substrate. At the surface of the target substrate, the excitedgases are reacted to form a layer on a target substrate held by thesusceptor 104.

In embodiments, each of the sectors 114 include a plurality of platessurrounded by a housing. In an embodiment, each sector 114 within thehousing includes a first plate (or electrode) and a second plate (orelectrode) between which a plasma is formed. For example, each sector114 can include a ground plate, electrically connected to ground, and anRF plate, electrically connected to an RF power source. The two platesare spaced a distance apart; a plasma may be formed in this distancebetween the ground plate and the RF plate. The sectors 114 defining theplasma generation device 112 may further include components for gasdelivery distribution, housing components, heating/cooling components,and/or other suitable components including as discussed below. As such,embodiments of sectors that may be used as the sectors 114 of the plasmagenerating device 112 are described in further detail with reference toFIGS. 2A, 2B, 2C, 3A, 3B, 3C, 4, 5, 6, 7, 8, 9A, 9B, and 10 below.

Further describing the system 100, FIG. 2A illustrates four sectors 114positioned to form plasma generating device 112A. Each sector 114 ispositioned above the susceptor 104. As illustrated in FIGS. 2A (and 2B,2C), each sector 114 has a plurality of holes or apertures 116 fromwhich the excited gas is provided from the sector 114 to the adjacenttarget substrate disposed on the susceptor 104. In an embodiment, eachsector 114 is positioned above a position of the susceptor 104 operableto hold a single wafer facing the sector 114. In an embodiment,different materials may be delivered from each of the sectors 114 suchthat a target substrate may experience different processes depending onits position on the susceptor 104 (see, e.g., FIG. 2C). In a furtherembodiment, the susceptor 104 may position a substrate such that isunder a first sector 114 and a first chemical(s) is delivered to thesubstrate; following, a rotation of the susceptor 104 the substrate maybe positioned under a second sector 114 and a second chemical(s),different from the first, is delivered to the substrate. Thus,sequential processes may be performed using the system 100 byintroducing different processing gases (e.g., species/molecules); thisis illustrated by deposition species A and deposition species B in FIG.2A. In other embodiments, A and B are the same. As discussed in furtherdetail below, in some embodiments, the plasma generating device 112 hassectors 114 that do not provide plasma. In a further embodiment, certainsectors 114 may provide toward the substrate a purge gas and/or othernon-plasma component.

FIG. 2B illustrates a bottom-up view in greater detail of an embodimentof plasma generating device 112, illustrated as plasma generating device112B. The plasma generating device 112B also includes a plurality ofsectors 114. The plasma generating device 112B may be substantiallysimilar to elements 112, 112A discussed above and disposed within asystem as discussed above. The plasma generating device 112B includes aplurality of sectors 114. The sectors 114 include holes 116 as discussedabove. The sectors 114 also include an outer region (e.g., housing)without holes. As illustrated in FIG. 2B, the plasma generating device112B includes between each of the sectors 114, a vacuum region includinga plurality of vacuum holes 202. The vacuum region may include a housingsuch as aluminum, steel, or other suitable material of the plasmagenerating device 112B. (In an embodiment, the vacuum holes 202 may bedisposed on the housing or outer portion of the sector 114 as opposed to“outside” of the sector 114.) Exemplary configurations for the vacuumholes 202 are discussed below with further reference to FIG. 10 . Thevacuum holes 202 may be substantially similar to vacuum holes 1004, alsodiscussed below with reference to FIG. 10 . The vacuum holes 202 may beapertures in plasma generating device 112 which allow for providingand/or maintaining a vacuum condition in the system 100 and inparticular, in the environment of the target substrate. The vacuumregion may also be referred to as an injector region. The vacuum regionmay include housing that surrounds an opening in which a modular sector114 is installed.

FIG. 2B also illustrates a gas supply region 204 in the plasmagenerating device 112 between the sectors 114. The gas supply region 204may include one or more outlets through which a gas is provided. In anembodiment, the gas is N₂ or another suitable inert gas. The gas supplyregion 204 may provide a “curtain” of gas that runs between the sectors114 from an outer edge to the inner edge of the sectors 114.

As illustrated in FIG. 2B, the sector 114 may be of a modular designallowing the sector 114 to be positioned in the plasma supply device112B. For example, the dashed line illustrates one embodiment of theedge of the sector 114, the surrounding areas (e.g., vacuum region, gassupply region 204) may be formed in a housing having openings withinsectors 114 are installed.

Referring now to FIG. 2C, illustrated is a schematic view of a plasmagenerating device 112C and 112D respectively. These exemplaryconfigurations of the plasma generating device may be substantiallysimilar to and used as discussed above with reference FIGS. 1A, 1B, 2A,and 2B. The plasma generating devices 112C and 112D similarly include aplurality (e.g., 8) of sectors 114. The schematic of FIG. 2C illustratesexemplary configurations of the sectors 114 with respect to thechemical, gas, ion, and/or other material provided by the sector 114.(It is noted that DCS (dichlorosilane) and/or NH₃ are exemplary gasesused for plasma generation; other components are also possible. Theseconfigurations are illustrative only and not intended to be limitingbeyond what is specifically and explicitly recited in the claims thatfollow. Rather, the devices 112C and 112D illustrate that each sector114 of the respective plasma generating device may provide a differentprocess step. The devices 112C and 112D further illustrate the gassupply region between the sectors 114 (e.g., N₂), which may besubstantially similar to as discussed above with reference to FIG. 2Band gas supply region 204.

Referring now to FIGS. 3A, 3B, and 3C, illustrated are cross-sectionalviews of an embodiment of a sector 114 or portion thereof. FIGS. 3A and3B share many similar features with differences noted herein; FIG. 3Cprovides a top view corresponding with the configuration illustrated byFIG. 3B. Except as noted herein, description of the elements applyequally to each of the embodiments. The sector 114 may be included in aPE-ALD system such as the system 100, illustrated above and/or besubstantially similar to the various embodiments of sectors 114 of FIGS.2A, 2B, and/or 2C. As illustrated in the embodiment of FIGS. 3A/3B, thesector 114 includes a housing 304 providing sidewalls and a top plate, agas inlet (or delivery) plate 312, a top electrode (also referred to asRF plate) 310, a bottom electrode (also referred to as a ground plate)308, and ground housing 306. A voltage conduit 310A is coupled to thetop electrode plate 310 to provide the biasing of the plate. In someembodiments, the top plate 310 is a high DC voltage is provided. In someembodiments, the voltage is provided to provide for an RF generation.The voltage conduit 310 is coupled to a power supply suitable for RFgeneration. It is noted that the electrical connection of the plates(e.g., ground and RF) may be interchanged in some embodiments.

The housing 304 may be aluminum or other suitable composition. In anembodiment, the housing 304 may define a boundary of the sector 114component. A portion of the housing 304 may include the ground platehousing 306, which may be contiguous with the ground plate 308. As such,the ground plate housing 306 and the ground plate 308 may be a singlepiece of conductive material such as aluminum. In some embodiments, theground plate housing 306 defines an outer boundary of the sector 114,for example with only a top plate of housing 304 present in the sector114.

Between the top plate (or electrode) 310 and the bottom plate (orelectrode) 308 is disposed a plasma generation region 318. Plasma isgenerated in the plasma generation region 318. In an embodiment, the topelectrode 310 includes a plurality of holes or apertures that passthrough the plate that is, from a top to a bottom surface of the topelectrode 310. Process gases, described in further detail below, flowthrough the holes in the top electrode 310 to the plasma generationregion 318. In an embodiment, the top electrode 310 is aluminum (Al).However, other suitable conductive materials may alternatively oradditionally be included in the top electrode 310. As described abovewith reference to the conduit 310A, the top electrode 310 is coupled toa power supply. The top electrode 310 may be secured to the housing 304.In an embodiment, a dielectric material interposes the top electrode 310and the housing 304 and/or 306. The dielectric may be used for exampleto prevent arcing between the plate 310 (e.g., see gap between sidewallof the plate 310 and the housing 306 of FIGS. 3A/3B).

Process gases may be fed into the sector 114 as illustrated by the gasinlet 314. The process gases include precursor gases, plasma generationgases, purge gases, cleaning gases, and/or the other process gases anyor all of which may be fed into the sector 114 through the gas inlet314. While the gas inlet 314 is illustrated as a single inlet, anynumber of inlets may be provided including as discussed below withreference to FIG. 8 . Further, while the gas inlet 314 in FIG. 3A isillustrated as being co-located with the RF connection 310A, otherembodiments are possible including where the gas inlet 314 is spaced adistance from the RF connection 310A. FIG. 3B illustrates an embodimentwhere the gas inlet 314 is spaced a distance from the RF connection310A. FIG. 3C illustrates a corresponding top view of a portion of thesection 114 that would be over at least a portion of a target substrate.See FIGS. 3A, 3B.

Precursors in atomic layer deposition that may be performed by thesector 114 can include inorganic and/or metalorganic components.Exemplary precursor gases include, but are not limited to, nitrogen(N₂), tetraethyl orthosilicate (TEOS), tetrachloride (TiCl₄), tri chlorosilane, DCS (dichlorosilane), or TCS (SiCl₃H), ammonia, and/or othercompositions including for example N, Al, Si, Ti, Ga, Ge, Co, Sr, Y, Zr,Nb, Ru, Ba, La, Hf, Ta, Jr, Pb, Bi, W, and compounds thereof. Exemplaryplasma process gases include, but are not limited to, argon. Purge gasesinclude suitable inert gases.

To control and distribute one or more of the process gases, the sector114 includes a gas inlet plate 312. In an embodiment, the gas inletplate 312 has a single hole or aperture through which gas is provided(see, e.g., gas inlet 314). In other embodiments, the gas inlet plate312 has a plurality of holes through which gas may be delivered. Anexample of the gas inlet plate 312 having a plurality of holes isillustrated in FIG. 8 , described in further detail below. In anembodiment, the gas inlet plate 312 is aluminum (Al); however othersuitable compositions are also possible. The gas inlet plate 312 may besecured to the housing 304 and/or ground housing 306 of the sector 114.Again, a single gas inlet conduit 314 is illustrated as extending to thegas inlet plate 312 of FIG. 3 . However, separate conduit (e.g., flowtubes) may be provided to the gas inlet plate 312 where each conduitcorresponds to one of multiple openings in the plate 312 (see FIG. 8 ).The gas inlet(s) 314 also extends through the top housing plate ofhousing 304.

Between the gas inlet plate 312 and the upper plate 310 there is a gasdistribution region 316. In an embodiment, the gas distribution region316 includes a porous ceramic material used to distribute the gas flowuniformity within the gas distribution region 316. It is noted that theFIG. 3B illustrates in the gas distribution region 316 a plurality oflayers of material, for example, porous ceramic. As discussed above,this may also apply to some embodiments of FIG. 3A. As discussed above,the top electrode 310 includes a plurality of holes or apertures throughwhich the process gas flows into the plasma generation region 318.

Spaced a gap from the top plate 310 is the bottom plate 308. In anembodiment, the bottom plate 308 is coupled to ground. The bottom plate308 and the top plate 310 provide the electrodes used to generate plasmathere between—referred to as plasma generation region 318. In anembodiment, the bottom plate 308 is aluminum (Al). However, otherconductive compositions are also possible. The bottom plate 308 hasholes or apertures therein through which the processing gassesincluding, for example, excited gas(es), are passed through the bottomplate 308 such that they can be delivered to be incident the targetsubstrate. See holes 116 of FIGS. 2A, 2B. The size (e.g., diameter),shape, quantity, location, and/or density of these holes may bedetermined to provide suitable plasma delivery. This is discussed infurther detail below. Plates, such as upper layer 310 and gas inletplate 312 may be bolted or otherwise fitted in the housing (306, 304) ofthe sector 114.

The sector 114 may be adjacent a vacuum region 320 including vacuumholes such as, vacuum holes 202 illustrated above in FIG. 2B.

A target substrate 302 is disposed below the plate 308 and on thesusceptor 104. The target substrate 302 may be a semiconductor wafer.The semiconductor wafer may include silicon or other proper materialsincluding those having material layers formed thereon. Other propermaterials include another suitable elementary semiconductor such asdiamond or germanium; a suitable compound semiconductor such as siliconcarbide, indium arsenide, or indium phosphide; or a suitable allowsemiconductor, such as silicon germanium carbide, gallium arsenicphosphide, or gallium indium phosphide. The semiconductor substrate mayinclude various doped regions, dielectric features, even multi-layerinterconnect structures. In an embodiment, the semiconductor substratehas a surface upon which a gate structure is desired, including, a gatedielectric. In some embodiments, the system 100 and/or sectors 114 maybe used for fabrication of the gate dielectric by atomic layerdeposition.

Referring now to FIG. 4 , illustrated is a bottom view of a plurality ofsectors 114 making a plasma generating device 112, which may be securedto an ALD system. (This view is that facing a surface of a targetsubstrate.) As illustrated, a plurality of sectors 114 are coupledtogether and/or coupled to another compound of a deposition system suchas system 100, to form the plasma generating device 112. The sectors 114of FIG. 4 may be substantially similar to as discussed above withreference to FIGS. 1A, 1B, 2A, 2B, 2C, and/or 3A, 3B, 3C. The sector 114has an electrode portion 404. The electrode portion 404 includes aregion having holes or apertures from which material is delivered towardthe target substrate. The vacuum region 320 may be a region of housingand includes vacuum holes/apertures as discussed above with reference tovacuum holes 202. In some embodiments, the vacuum region 320 may bereferred to as an injector or device within which a modular sector 114can be positioned therein. Adjacent the vacuum region 320 may be anouter portion 402 may also include a gas supply region such as, forexample, operable to provide an inert gas (e.g., gas curtain) betweensectors 114.

The electrode portion 404 of the sector 114 is the portion defined asthe region between the bottom plate 308 and/or the biased top plate 310.In an embodiment, the electrode portion is the region where the bottomplate 308 interfaces the biased top plate 310 to provide and define theplasma generation region 318 between the plates. The electrode region404 can include a portion of the bottom plate 308 having holes orapertures in it such through which the excited gases are delivered froma plasma generation region to the target substrate. In an embodiment, noexcited gas(es) are delivered through the outer portion 402. In someembodiment, holes are not provided through the entirety of the electroderegion 404, including as described below with reference to FIGS. 5, 6,and 7 .

In an embodiment, each of the sectors 114 are secured to a device (e.g.,injector or portion of plasma generation device 112) of the system 100and a portion of the chamber body 106 may be disposed around the coupledsectors 114. While eight sectors 114 are illustrated in FIG. 4 , asdiscussed above, any number of sectors is possible within a plasmaenhanced system such as an PE-ALD system.

Referring now to FIG. 5 , illustrated is an embodiment of a sector 502.The sector 502 may be an embodiment of the sector 114. The sector 502may be substantially similar to as discussed above with reference to thesector 114 and FIGS. 1A, 1B, 2A, 2B, 2C, 3A, 3B, 3C, and 4 . The sector502 includes an outer region 504, an electrode region 506, and a holeregion 508. The outer region 504 may include housing such as discussedabove with reference to housing 304 and/or 306 of FIG. 3 . The electrodeportion 506 may be the portion defined by the interaction of two plates(or electrodes) having a potential difference (e.g., ground/RF) therebetween, for example, the bottom plate 308 and the biased top plate 310.In an embodiment, the electrode portion 506 is the region where thebottom plate (e.g., 308) faces the biased top plate (e.g., 310)providing a plasma generation region (e.g., region 318) there between.In an embodiment, the electrode portion 506 is defined by the shape ofthe top plate 310 (in particular, the portion of the plate 310 having anRF voltage applied) and/or the shape of the bottom plate 308.

As illustrated in FIG. 5 , the electrode portion 506 of the sector 502is rectangular in shape. In an embodiment, the shape of the top plate isapproximately rectangular in shape. In an embodiment, the shape of thebottom plate is approximately rectangular in shape. In an embodiment,the electrode portion 506 has a width “w” between approximately 5 andapproximately 20 centimeters. In an embodiment, the electrode portion506 has a length “L” between approximately 20 to approximately 60centimeters. In an embodiment, the top plate 310 is provided with thewidth ‘w’ and the length ‘L’. In an embodiment, the bottom plate 308 isprovided with the width ‘w’ and the length ‘L’.

An electric field near the RF plate (e.g., top plate 310) defining oneportion of the electrode of a sector may be higher than other regionsduring the generation of plasma. For example, in an electrode or RFplate having a wedge-shape a non-uniform electric field develops. Byproviding a rectangular shape of the electrode region, a uniform area isprovided in a radial direction thereby defining a more uniform electricfield. In contrast, if the electrode portion (e.g., as defined by thetop plate 310) is the substantially wedge-shaped configuration similarto the sector 114, a higher electric field may result in the regionhaving a smaller width. A non-uniform field can lead to a non-uniformplasma, which in turn lead to a non-uniform densification of a depositedfilm. Thus, the modified shape of FIG. 5 can improve the uniformity ofplasma distribution across a radial direction. Therefore, the quality ofthe film deposited may also be improved.

As illustrated in FIG. 5 , in an embodiment, the processing gas(es) orcomponents are delivered to a target substrate in a portion of theelectrode region 506, illustrated as hole or aperture portion 508. Forexample, the hole portion 508 is a portion of a bottom plate, forexample, plate 308, having holes or apertures providing a passage forprocessing gases to be delivered from a plasma generation regiondisposed above the bottom plate, through the holes in the bottom platetowards the target substrate. The holes or apertures of portion 508 maybe substantially similar to the apertures 116, discussed above. In anembodiment, no processing gas(es), excited or otherwise, are deliveredfrom the sector 502 outside of this defined region hole portion 508. Thesize (e.g., diameter), shape, quantity, location, and/or density of theholes may be determined to provide suitable plasma delivery. This isdiscussed in further detail below.

Referring now to FIG. 6 , illustrated is another embodiment of a sector,illustrated as sector 602. The sector 602 may be an embodiment of thesector 114, discussed above with reference to FIGS. 1A, 1B, 2A, 2B, 2C,3, and 4 . The sector 602 may be substantially similar to the sector 114discussed above with reference to FIGS. 1A through 4 . The sector 602includes an outer region 604, an electrode region 606, and a hole region608. A plurality of holes or apertures 610 are illustrated in the holeregion 608. The holes 610 may be substantially similar to the holes 116,illustrated above with reference to FIGS. 2A, 2B, 2C and sector 114. Theouter region 604 may include housing such as discussed above withreference to housing 304 and/or 306 of the sector 114 of FIG. 3 . Theelectrode portion 606 may be the portion defined by the interaction twoplates having a potential difference (RF potential) therebetween, suchas plate 308 and the biased top plate 310. In an embodiment, theelectrode portion 606 is the region where the bottom plate 308 faces thebiased top plate 310 providing the plasma generation region 318 therebetween. In an embodiment, the electrode region 606 is defined by theshape of the top plate 310 (in particular, the portion of the plate 310having an RF voltage applied). It is noted that FIG. 6 illustrates asubstantially wedge-shaped electrode region 606; however, other shapesare possible including as illustrated above with reference to FIG. 5 .

As illustrated in FIG. 6 , in an embodiment, the processing gas(es) aredelivered to a target substrate in a portion of the electrode region606, illustrated as hole portion 608. For example, the hole portion 608is a portion of a bottom plate, for example, plate 308, having holes orapertures in it such that processing gases (e.g., chemically reactivespecies are otherwise) are delivered from a plasma generation regiondisposed above the bottom plate, through the holes in the bottom platetowards the target substrate. In an embodiment, no gas(es) are deliveredoutside of this defined region hole portion 608 by the sector 602.(However it is noted that surrounding materials may deliver gases (e.g.,inert gas curtains between sectors). The size (e.g., diameter), shape,quantity, location, and/or density of the holes of the sector 602 may bedetermined to provide suitable plasma delivery.

FIG. 6 is illustrative of an increasing density of holes 610 relative tothe surrounding hole region 608 of the bottom plate from an inner end(smaller width edge) of the sector to a second outer end (larger widthedge) of the sector 602. In another embodiment, the density of holes 610relative to the hole region 608 of the bottom plate may be greater atthe center region of the sector 602 than one or both ends. In anotherembodiment, a decreasing density of holes 610 relative to thesurrounding hole region 608 of the bottom plate from an inner end(smaller width edge) of the sector to a second outer end (larger widthedge) of the sector 602 is provided.

The hole 610 density relative to the surrounding hole region 608 of thebottom plate is selected based on a desired plasma density and/ordesired thickness of the deposition layer. A lower hole 610 density in aportion of the hole region 608 provides a reduced flow of excitedspecies (molecules) to the target substrate when the sector 602 is usedfor plasma deposition. Thus, the hole 610 density can be determinedbased on the desired thickness of deposited film at this region. In anembodiment, the ratio of holes 610 to the surrounding hole region 608(e.g, plate 308) is between approximately 0.1 and 0.4 to 1 adjacent aninner end (edge with smaller width) and the ratio of holes 610 to thesurrounding hole region 608 (plate 308) is between approximately 0.3 and0.7 to 1 adjacent an outer end.

In an embodiment, a method of determining the hole density includesproviding an initial hole density, performing a determination theresultant film thickness, determining an adjustment desired to the filmthickness and/or thickness uniformity; and modifying the hole density inresponse to the desired adjustment. The method may be performed usingexperimental or simulation tests. The design of the hole density providefor local control of plasma density.

Referring now to FIG. 7 , illustrated is another embodiment of a sector,illustrated as sector 702. The sector 702 may be an embodiment of thesector 114. The sector 702 may be substantially similar to the sector114 including as discussed above with reference to FIGS. 1A, 1B, 2A, 2B,2C, 3, and 4 . The sector 702 includes an outer region 704, an electroderegion 706, and a hole region 708. A plurality of holes 710 areillustrated in the hole region 708. The holes 710 may be substantiallysimilar to holes 116, discussed above with reference to sector 112 andholes 114. It is noted that only a few of the holes 710 are illustratedat each of an inner region (top of FIG. 7 ), middle region, and outsideregion of the hole regions 708. These are intended to be illustrativeand not intended to imply a lack of additional holes 710. The outerregion 704 may include housing such as discussed above with reference tohousing 304 and/or 306 of FIG. 3 . The electrode portion 706 may be theportion defined by the interaction two plates having a potentialdifference (ground/RF) there between, such as plate 308 and the biasedtop plate 310. In an embodiment, the electrode portion 706 is the regionwhere the bottom plate 308 faces the biased top plate 310 providing theplasma generation region 318 there between. In an embodiment, theelectrode region 706 is defined by the shape of the top plate 310 (inparticular, the portion of the plate 310 having an RF voltage applied).It is noted that FIG. 6 illustrates a substantially wedge-shapedelectrode region 706; however, other shapes are possible including asillustrated above with reference to FIG. 5 .

As illustrated in FIG. 7 , in an embodiment, the processing gas (e.g.,excited species (molecules) produced by in the plasma generation region)are delivered to a target substrate through holes in a portion of theelectrode region 706, illustrated as hole region 708. For example, thehole region 708 is a portion of a bottom plate, for example, plate 308,having holes or apertures in it such that processing gas such as excitedspecies of the processing gases are delivered from a plasma generationregion disposed above the bottom plate, through the holes in the bottomplate, and towards the target substrate. In an embodiment, no processinggases (e.g., excited molecules) are delivered by the sector 702 outsideof this defined region of hole region 708. (However, processing gas suchas an inert curtain may be formed between sectors as discussed above).The size (e.g., diameter), shape, quantity, location, and/or density ofthe holes may be determined to provide suitable plasma delivery.

FIG. 7 is illustrative of a varying size, e.g., diameter, of holes 710from a center portion (end having a smaller width) to an outer endportion (end having a larger width) of the sector 702. In an embodiment,the diameter d1 of the holes 710 in a first portion is greater than thediameter d2 of the holes 710 in a middle portion; diameter d2 may begreater than the diameter d3 of holes 710 in an outer portion. In otherwords, in an embodiment, d1>d2>d3. In some embodiments, the differencebetween d1 and d2 is at least approximately 2%. In some embodiments, thedifference between d2 or d1 and d3 is at least approximately 2%. In afurther embodiment, d1 is approximately 3.2 mm; d2 is approximately 3.1mm; d3 is approximately 3 mm.

The variation of hole diameter illustrated in FIG. 7 is exemplary only.In other embodiments, the variation in diameter of the holes 710 maydiffer (e.g., d3>d2>d1; d2>d1>d3; d2>d3>d1; d3>d1>d2). The hole 710diameter is selected based on a desired plasma density and/or desiredthickness of the deposition layer. Different diameter hole 710 in aportion of the hole region 708 controls plasma density at that localportion, in other words, different quantity of excited molecules areprovided to the target substrate underlying the portion with differenthole diameter.

In an embodiment, a method of determining the hole diameter includesproviding an initial hole diameter, performing a determination of thefilm thickness, determining an adjustment desired to the film thicknessand/or thickness uniformity; and modifying the hole diameter in responseto the desired adjustment. The method may be performed usingexperimental or simulation tests. The size of the holes (e.g., diameter)of the sector may be tuned to control plasma density is a localizedarea.

Referring now to FIG. 8 , illustrated is a sector 802 and in particulara gas inlet plate 804 of the sector 802. The sector 802 may be anembodiment of the sector 114 described above with reference to FIGS. 1A,1B, 2A, 2B, 2C, 3A, 3B, 3C, and 4 . The sector 802 may be substantiallysimilar to the sector 114 as discussed above.

The gas inlet plate 804 may be substantially similar to the gas inletplate 312, described above with reference to FIG. 3 , with differencesnoted. The gas inlet plate 804 includes a plurality of inlet aperturesor holes 806. The apertures 806 extend through the gas inlet plate 804.Each of the inlet apertures 806 may be connected to a flow tubeproviding one or more gases to and through the inlet aperture 806. In anembodiment, the gases provided to and through the apertures 806 includeprecursor gases, plasma generation gases, inert gases, and/or otherprocessing gases. Exemplary gases include, but are not limited to,nitrogen (N₂); tetraethyl orthosilicate (TEOS); tetrachloride (TiCl₄);DCS (dichlorosilane); or tri chloro silane TCS (SiCl₃H); ammonia; and/orother compositions including for example N, Al, Si, Ti, Ga, Ge, Co, Sr,Y, Zr, Nb, Ru, Ba, La, Hf, Ta, Jr, Pb, Bi, W, and compounds thereof;argon. In an embodiment, a first gas (e.g., N₂) is delivered to a firstand second aperture 806A and/or 806C. In a further embodiment, a secondgas (e.g., Ar/N₂ gaseous mixture) is delivered to an aperture 806B. Theexemplary gases (N₂, Ar) may be used to form a layer such as siliconnitride on the target substrate. It is noted that the diameters of theinlet apertures 806 may differ from one another. The provision of theprocessing gases to each of the inlet apertures 806 may be provided by acontroller in the system. Further, each aperture and/or each sector maybe separately controlled in terms of the type of gas delivered and/orthe amount of the gas delivered. Specifically, the controller may affectthe gas flow rate (e.g., mass flowrate controller). It is noted thatthree inlet apertures 806 are illustrated in FIG. 8 for ease ofreference and not intended to limit the number of inlet apertures to anyspecific number.

The gas inlet plate 804 provided with the sector 802 may control theplasma reactive species by adjusting the local gas concentration (e.g.,N₂ or other precursor) delivered to the top plate of the plasmageneration region. The gas concentration in turn affects the reactionrate in the plasma. Allowing for adjustment of the local concentration(e.g., by controlling separately 806A, 806B, 806C) of a processing gas(e.g., nitrogen) impacts the generation of the reactive species at thatlocation. The amount of processing gas fed impacts the density of thereactive atomic element in the plasma. For example, in an embodiment,the amount of N₂ fed to the different apertures 806 impacts the densityof the reactive atomic nitrogen in an argon plasma. This also allows forlocalized control of plasma density.

Aspects of the sector 802 of FIG. 8 may be used in conjunction with anyor all of elements of sectors 114, 502, 602, and/or 702 described abovewith reference to FIGS. 1A, 1B, 2A, 2B, 2C, 3, 4, 5, 6, and 7 . That is,the gas inlet plate 804 may be used in conjunction with the electroderegion 706, 606, and/or 506 within a single sector.

Referring now to FIG. 9A, illustrated is an embodiment of a sector 902.The sector 902 may be substantially similar to the sector 114, describedabove with reference to FIGS. 1A-4 with additional modificationsdescribed herein. Reference numerals have been repeated for ease ofreference. Additionally, any or all of the elements of embodiments ofthe sectors 502, 602, 702, and/or 802 may be used in conjunction withthe sector 902.

The sector 902 includes the housing 304, the gas deliver plate 312, thetop electrode (also referred to as RF plate) 310, the bottom electrode(also referred to as a ground plate) 308, and the ground housing 306.The voltage conduit 310A is coupled to the top electrode plate 310. Thegases may be fed into the sector 902 as illustrated by the gas inlet314. Precursor gases, purge gases, plasma generation gases, cleaninggases, and/or the other process gases may be fed into the sector 902through the gas inlet 314. Each of these elements may be substantiallysimilar to as discussed above.

In addition to the previous discussions, the sector 902 further includesa temperature control device 904. The temperature control device 904 maybe provided within the housing 304 and adjacent the top and/or bottomplate (e.g., 308, 310) of the sector 902. The temperature control device904 affects and modifies the temperature of the plates/electrodes andthe plasma generation region (e.g., 318).

The temperature control device 904 may include water or oil coolingmechanisms such as conduit having a cooling liquid. The temperaturecontrol device 904 may additionally or alternatively include heatingmechanisms (coils). The temperature control device 904 is coupled to acontroller 906, which may be provided within a system, such as thesystem 100 described above with reference to FIG. 1A, 1B, and/or remoteto the system including the sector 902. The controller may determineand/or implement cooling or heating using the temperature control device904. As the temperature of the plates and/or plasma generation region ischanged, the local gas density changed (e.g., Ideal gas law) and so asthe chemical reaction rate is affected thus altering the availability ofexcited species for the deposition process. Further, the controller 906may be operable to provide a localized cooling/heating of the electrodesor plasma generation region thereby providing localized control over theplasma generation.

Referring now to FIG. 9B, illustrated is the sector 602 having atemperature control device 904 disposed adjacent the sector (e.g., inhousing such as the chamber body 106) providing temperature control tothe electrode region 606 of the sector 602. It is noted that FIG. 9B isexemplary only and not intended to be limited to any specificconfiguration of holes of a sector. Rather, the temperature controldevice can be provided adjacent to and/or within any of the sectorsdiscussed herein. The temperature control device 904 is positioned suchthat, while being operated by a controller, it can provideheating/cooling to the plasma forming region and/or the top and bottomplate used to form the plasma as discussed above with reference to FIG.9A.

Referring to FIG. 10 , illustrated is an embodiment of the sector 114and adjacent vacuum region 1002. The sector 114 may be an embodiment ofthe sector 114, described above. The sector 1002 may substantiallysimilar to the descriptions of sector 114, described above withreference to FIGS. 1A, 1B, 2A, 2B, 2C, 3, and 4 . The elements of thesector 114 of FIG. 10 may be used in conjunction with any or all ofelements of sectors 114, 502, 602, 702, 802, and/or 902 described abovewith reference to FIGS. 1A, 1B, 2A, 2B, 2C, 3A, 3B, 3C, 4, 5, 6, 7, 8and 9 . That is, the sector 114 may be used in conjunction with featuresof the electrode regions, gas inlet plate, temperature controlmechanism, and/or other features discussed above.

The adjacent vacuum region 1002 may be substantially similar to thevacuum region 320 described above. The vacuum region 1002 includes ahousing (e.g., aluminum, steel, or other suitable material) thatsurrounds the sector 114 and includes a plurality of vacuum holes 1004.The vacuum holes 1004 may be substantially similar to the vacuum holes202, discussed above. The vacuum holes 1004 may also provide an exhaustflow path for processing gases not delivered to the target substrate fordeposition. This exhaust flow path may drive the excited species fromthe plasma generation region to the target substrate. Additional vacuumholes 1004 provide higher local driving force(s), thus impacting thedownstream distribution of the plasma reactive species.

In an embodiment, approximately 80 to 100 vacuum holes 1004 are disposedin the vacuum region 1002. One or more of the vacuum holes 1004 may havea diameter between approximately 2 millimeters (mm) and 8 mm.

In an embodiment, the density of vacuum holes at a center portion(adjacent the end of the sector defined by having a shorter width) isdifferent from that at an outer portion (adjacent the end of the sectordefined as having a longer width). In an embodiment, the density ofvacuum holes increases from the center end of the edge end of thesector. However, other configurations of density may also be possiblebased on the desired plasma density. For example, a smaller number ofvacuum holes are disposed in a region around the center portion of thesector than the number of vacuum holes disposed in a region around theouter portion. In an embodiment, a method of determining the vacuum holedensity includes providing an initial number of holes, performing adetermination of the film thickness, determining an adjustment desiredto the film thickness and/or thickness uniformity; and modifying thenumber/density of vacuum holes in response to the desired adjustment.The method may be performed using experimental or simulation tests. Theconfiguration of the vacuum holes may provide for improvement in theradial distribution of the plasma.

Referring now to FIG. 11 , illustrated is a flow chart of an embodimentof a method 1100 of depositing a layer on a target substrate. In anembodiment, the layer is deposited using a plasma-enhanced atomic layerdeposition (PE-ALD) process. The method 1100 begins at block 1102 wherea plasma tool configuration, operable to deposit a material onto atarget substrate, is determined. In an embodiment, block 1102 includesdetermining features of a sector of a deposition system, such asfeatures of the sector 114 of the system 100 described above. In anembodiment, block 1102 includes determining a shape of an electroderegion of a sector of the deposition system, such as discussed abovewith reference to FIG. 5 . In an embodiment, block 1102 includesdetermining a density of holes (e.g., through which processing gaseswill be delivered from the sector to the target substrate) in a bottomplate used for plasma generation in a sector of a system, such asdiscussed above with reference to FIG. 6 . In an embodiment, block 1102includes determining a size of holes in a bottom plate used for plasmageneration in a sector of a system (e.g., through which processing gaseswill be delivered from the sector to the target substrate), such asdiscussed above with reference to FIG. 7 . In an embodiment, block 1102includes determining a number, size, and/or configuration of holes in agas inlet plate of a sector used for introducing process gases into gasdistribution region of a sector of a system, such as discussed abovewith reference to FIG. 8 . In an embodiment, block 1102 includesdetermining a configuration, size or density of vacuum holes in a vacuumregion adjacent and/or interposing sectors, such as discussed above withreference to FIG. 10 . In some embodiments, each of these determinationsis performed in block 1102. The determinations may be made based on adesired localized plasma density including, for example, its effect ondeposited film thickness and/or uniformity. The determinations may useexperimental and/or simulation results to determine the configurationfor the respective element of the sector.

After the determination of the system configuration of block 1102, themethod 1100 proceeds to block 1104 where a plasma tool having thedetermined configuration is provided. The plasma tool may be a PE-ALDsystem, for example, as illustrated in FIGS. 1A, 1B, 2A, 2B, and 2C andother figures as described above. The plasma tool provided may have moreor more sectors, for example, as illustrated in FIGS. 3A, 3B, 3C, and 4described above. One or more of the sectors may include configurationsas illustrated with reference to FIGS. 5, 6, 7, 8, 9 and/or 10 ,described above.

The method 1100 then proceeds to block 1106 where a substrate isprovided. The substrate may be a semiconductor wafer. The semiconductorwafer may include silicon or other proper materials including thosehaving material layers formed thereon. Other proper materials includeanother suitable elementary semiconductor such as diamond or germanium;a suitable compound semiconductor such as silicon carbide, indiumarsenide, or indium phosphide; or a suitable allow semiconductor, suchas silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide. The semiconductor substrate may include various dopedregions, dielectric features, even multi-layer interconnect structures.In an embodiment, the semiconductor substrate has a surface upon which agate structure is desired, including, a gate dielectric. In someembodiments, method 1100 may be used for fabrication of the gatedielectric layer y atomic layer deposition. In some embodiments, themethod 1100 may be used to form a dielectric film such as siliconnitride on the semiconductor wafer.

Block 1106 may include positioning one or more substrates on a susceptorof the plasma tool described above with reference to block 1104. Theprovided substrate may have a target surface facing a bottom ordownstream face of the sector which has holes through which the excitedgases for deposition are provided to the substrate. The substrate may bepositioned as discussed above with reference to FIGS. 1A, 1B, 2A, 2B,2C, and/or 3A, 3B, 3C.

The method 1100 then proceeds to block 1108 where a plasma is generatedin the provided plasma tool. The plasma may be generated in a plasmageneration region such as the plasma generation region 318, describedabove with reference to FIG. 3A, 3B. The plasma may be generated betweentwo plates or electrodes, such as a bottom or grounded plate (e.g.,plate 308) and a top or biased (RF) plate (e.g., plate 310). The densityof the plasma generated, including the localized density, may bedetermined by the configuration of the sector as discussed above withreference to block 1104.

In some embodiments, the method 1100 includes the control of atemperature within a region of the sector within which the plasma isformed in block 1110. In other embodiments, block 1110 is omitted. Thetemperature control may include heating and/or cooling elements of theplasma system and in particular adjacent the plasma generation region.The temperature control may be performed by a temperature controlapparatus that may be substantially similar to as discussed above withreference to FIG. 9A/9B. A controller may be used to operate thetemperature control apparatus, determine a cooling and/or heating leveland/or location. The controller may determine the cooling/heating levelin order to achieve a desired rate of reaction of the processing gases.

The method 1100 then proceeds to block 1112 where a material isdeposited on the substrate using the generated plasma by passing theexcited gases (molecules) through holes in a plate of the sector ontothe target substrate. In an embodiment, the material deposited insilicon nitride. However, other exemplary depositions include otherdielectric, conductive or semiconductor materials. For example, themethod 1100 may deposit silicon oxide, HfO₂ or other low-k dielectrics,metal nitrides, Al₂O₃ or other metal oxides, metal silicates, and/orother suitable materials.

Thus, provided are systems and methods in which the density of plasmamay be controlled or modified by modifying configuration of the system.In some embodiments, modifying the diameter and/or density of the holesin a plate through which the excited molecules pass provides for controlof the plasma and different densities of plasma in different regions. Insome embodiments, the control of the flow rate of process gases near theplasma generating region provides for localized control of the densityof plasma. In some embodiments, the quantity and/or density of vacuumholes in a sector for generating plasma allows for localization of thedensity of plasma. In some embodiments, selective heating/coolingaffects the reaction rate due to the change in local gas density andthereby affects the density of plasma generated and energized moleculesprovided toward a target substrate. In some embodiments, an electrode isprovided with a rectangular shape in order to improve the in order toprovide a more uniform electric field around the plasma generationplate(s). Each of these systems and methods for controlling thegeneration of plasma may be used together or separately.

In an embodiment, described is a semiconductor manufacturing systemincluding a susceptor configured to hold a semiconductor wafer and asector disposed above the susceptor. The sector includes a first plateand an overlying second plate, operable to form a plasma between theplates. The first plate includes a plurality of holes extending throughthe first plate. The plurality of holes varies in at least one ofdiameter and density from a first region of the first plate to a secondregion of the first plate.

In another embodiment, discussed is a deposition tool for performingatomic layer deposition (ALD). The tool includes a susceptor operable tohold a semiconductor wafer and a sector disposed above the susceptor.The sector includes a first RF biased plate and a second plate coupledto ground. The second plate has a first plurality of holes near a firstend and a second plurality of holes near a second end. The first andsecond pluralities of holes are operable to provide a different amountof excited molecules to pass through the second plate (e.g., towards thesubstrate). The sector also includes a plasma generation region disposedbetween the first RF biased plate and the second plate where the excitedmolecules are formed in the plasma generation region. Further, thesector includes a gas inlet plate disposed above the second plate. Thetool provides a plate above the sector, wherein the sector is attachedto the plate.

Also described is an embodiment of a method of deposition. The methodincludes receiving a semiconductor wafer onto a susceptor; anddelivering an energized atom from the generated plasma to thesemiconductor wafer through a plurality of apertures in the secondplate. A plasma is generated above the semiconductor wafer between afirst and a second plate in a sector that includes providing a higherdensity plasma at a first region of the first plate than a second regionof the first plate.

What is claimed is:
 1. A method of deposition, the method comprising:receiving a semiconductor wafer onto a susceptor; providing a pluralityof sectors each including a first plate and a second plate, the secondplate laterally adjacent to the first plate, wherein each of theplurality of sectors is wedge-shaped and at least one of the first plateor the second plate of a first sector of the plurality of sectors isrectangular-shaped; securing the plurality of sectors together;generating a plasma above the semiconductor wafer between the firstplate and the second plate in a first sector of the plurality ofsectors, wherein the generating the plasma includes providing a higherdensity plasma at a first region of the first plate than a second regionof the first plate; and delivering an energized atom from the generatedplasma to the semiconductor wafer through a plurality of apertures inthe second plate.
 2. The method of deposition of claim 1, furthercomprising: adjusting a temperature of one of the first plate and thesecond plate of the first sector during the generating the plasma. 3.The method of deposition of claim 2, wherein the adjusting thetemperature is performed by one of a water cooling mechanism or oilcooling mechanism.
 4. The method of claim 2, wherein the adjusting thetemperature changes a density of processing gases in the first sector.5. The method of deposition of claim 1, further comprising: determininga size of the plurality of apertures in the second plate.
 6. The methodof deposition of claim 5, wherein the determining the size includesproviding a greater diameter of a first subset of the plurality ofapertures than a second subset of apertures.
 7. The method of depositionof claim 1, further comprising: using the energized atom to form ahafnium oxide layer on the semiconductor wafer.
 8. The method of claim1, wherein the generating the plasma includes providing the higherdensity plasma at the first region of the first plate by providing afirst density of holes such that the second region of the first platehas a second density of holes greater than the first density, andwherein the first and second regions confine the holes to a region thatis wedge-shaped.
 9. The method of claim 1, wherein the other one of thefirst plate or the second plate of a first sector of the plurality ofsectors is wedge-shaped.
 10. A method of semiconductor devicefabrication, the method including: receiving a semiconductor wafer ontoa susceptor, wherein the semiconductor wafer is a first shape; providinga module disposed above the susceptor, wherein the module includes afirst plate and a second plate, each of the first and second platesbeing a second shape, the second shape being different than the firstshape and the second shape being rectangular; applying a voltagedifference between the first plate and the second plate; creating auniform electric field in a radial direction, wherein the createduniform electric field is larger than a substantially wedge-shapedregion of the first plate; delivering a plasma through a plurality ofholes confined in the substantially wedge-shaped region of the firstplate; and providing the delivered plasma to the semiconductor wafer.11. The method of claim 10, wherein the delivering the plasma throughthe plurality of holes includes delivering a greater amount of plasmathrough a first portion of the substantially wedged-shaped region of thefirst plate than a second portion of the substantially wedge-shapedregion of the first plate.
 12. The method of claim 11, wherein thegreater amount of plasma is delivered from a first subset of theplurality of holes having a greater diameter than a second subset of theplurality of holes.
 13. The method of claim 11, wherein the greateramount of plasma is delivered from a first subset of the plurality ofholes having a first density than a second subset of the plurality ofholes.
 14. The method of claim 11, wherein the providing the deliveredplasma to the semiconductor wafer includes depositing a dielectric layeron the semiconductor wafer.
 15. The method of claim 14, wherein thedielectric layer is a gate dielectric.
 16. The method of claim 11,further comprising: determining a desired rate of reaction to form theplasma; and adjusting a temperature using a temperature controlapparatus to achieve the desired rate of reaction.
 17. A method ofsemiconductor fabrication, comprising: receiving a semiconductor waferonto a susceptor; providing a temperature controller adjacent a moduledisposed above the susceptor: generating a plasma above thesemiconductor wafer between a first and a second plate in the module,wherein the generating the plasma includes: providing first plate havinga first region having a first plurality of openings in the first plateand a second region of the first plate having a second plurality ofopenings, the second plurality of openings having a different densitythan the first plurality of openings; during the generating the plasma,adjusting a temperature of by using the temperature controller toperform localized temperature control having a first temperature in thefirst region and a second temperature, different than the firsttemperature, in the second region of the first plate; and delivering anenergized gas from the generated plasma to the semiconductor waferthrough a plurality of apertures in the second plate, wherein a densityof the energized gas in a first region is determined by the firsttemperature and the first plurality of openings and a density of theenergized gas in a second region is determined by the second temperatureand the second plurality of openings.
 18. The method of claim 17,wherein the adjusting the temperature includes increasing thetemperature using a heating mechanism of coils.
 19. The method of claim17, wherein the adjusting the temperature includes decreasing thetemperature using a cooling liquid.
 20. The method of claim 17, whereinthe adjusting the temperature controls an availability of excitedspecies during the generating the plasma.